Product Summary

The FF200R12KE3 is an IGBT-Module.

Parametrics

FF200R12KE3 maximum rated values: (1) collector-emitter voltage VCES: 1200 V; (2) IC, nom.: 200 A; (3) DC-collector current IC: 295 A; (4) repetitive peak collector current ICRM: 400 A; (5) total power dissipation Ptot: 1050 W; (6) gate-emitter peak voltage VGES: +/- 20 V.

Features

FF200R12KE3 characteristic values: (1) VCE sat: 1.7 to 2.15 V; (2) collector-emitter saturation voltage: 2 V; (3) gate threshold voltage: 5.0 to 6.5 V; (4) input capacitance Cies: 14.0nF; (5) collector-emitter cut-off current ICES: 5.0mA; (7) gate-emitter leakage current IGES: 400nA.

Diagrams

FF200R12KE3 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FF200R12KE3
FF200R12KE3

Infineon Technologies

IGBT Transistors 1200V 200A DUAL

Data Sheet

0-6: $87.41
6-10: $78.67
FF200R12KE3_B2
FF200R12KE3_B2

Infineon Technologies

IGBT Modules N-CH 1.2KV 295A

Data Sheet

0-6: $85.58
6-10: $77.02